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NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor

High DC Current Gain: hFE = 2500 Type @ IC = 4A Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA Monolithic Construction with Built-In Base-Emitter Shunt Resistor

 
$7.00
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Overview

NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor

Features

High DC Current Gain: hFE = 2500 Type @ IC = 4A Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA Monolithic Construction with Built-In Base-Emitter Shunt Resistor

Product Details

General Information
Manufacturer
NTE
Part Number
NTE261
Product Type
Transistor
Miscellaneous
Country of Origin
USA

Product Details

General Information
Manufacturer
NTE
Part Number
NTE261
Product Type
Transistor
Miscellaneous
Country of Origin
USA

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NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor
$7.00 Usually ships in 1-2 days