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NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor

NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor

by NTE Electronics
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$7.00 - $7.00
$7.00
$7.00 - $7.00
$7.00
Free shipping

High DC Current Gain: hFE = 2500 Type @ IC = 4A Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA Monolithic Construction with Built-In Base-Emitter Shunt Resistor

Overview

NTE Electronics

NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor

High DC Current Gain: hFE = 2500 Type @ IC = 4A Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA Monolithic Construction with Built-In Base-Emitter Shunt Resistor

Product Details

General Information
Manufacturer
NTE
Part Number
NTE261
Product Type
Transistor
California Residents
Proposition 65 Warning
Miscellaneous
Country of Origin
USA